Vapor deposition reactor and method for forming thin film

ABSTRACT

A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority from and the benefit under 35 U.S.C.§119(e) of U.S. Patent Application No. 61/185,076, entitled “ReactorApparatus For Atomic Layer Deposition And Method Of Forming Thin FilmUsing The Reactor Apparatus,” filed on Jun. 8, 2009, which isincorporated by reference herein in its entirety. This application isrelated to U.S. patent application Ser. No. 12/539,477, entitled “VaporDeposition Reactor For Forming Thin Film,” filed on Aug. 11, 2009; U.S.patent application Ser. No. 12/539,490, entitled “Vapor DepositionReactor,” filed on Aug. 11, 2009; and U.S. patent Ser. No. 12/560,690,entitled “Vapor Deposition Reactor Using Plasma And Method for FormingThin Film Using the Same,” filed on Sep. 16, 2009, which areincorporated by reference herein in their entirety.

BACKGROUND

1. Field of the Invention

The disclosure relates to a vapor deposition reactor and a method forforming a thin film using the same.

2. Description of the Related Art

In general, a showerhead-type reactor is used in chemical vapordeposition (CVD) for injecting a precursor. In the showerhead-typereactor deposition is performed by mixing a source precursor and areactant precursor within the interior of a showerhead and then sprayingthe mixed precursors onto a substrate. On the other hand, in a reactorfor atomic layer deposition (ALD), a source precursor and a reactantprecursor are alternately sprayed so that they are not mixed with eachother. Based on the direction of the precursor spray, reactors aredivided into (i) a cross-flow or traveling-wave type reactor and (ii) atype of reactor that injects the precursor vertically to the surface ofthe substrate. The cross-flow or traveling-wave type reactor injects aprecursor in a direction parallel to a surface of a substrate surfacefor deposition of the precursor.

The ALD uses the bonding force of a chemisorbed layer that is differentfrom the bonding force of a physisorbed layer. In the ALD, a precursoris absorbed into the surface of a substrate and then purged with aninert gas. As a result, physisorbed molecules of the precursor (bondedby the Van der Waals force) are desorbed from the substrate. However,chemisorbed molecules of the precursor are covalently bonded, and hence,these molecules are strongly adsorbed in the substrate. Hence, thechemisorbed molecules are not desorbed from the substrate. The ALD isperformed using the properties that the chemisorbed molecules of theprecursor (adsorbed in the substrate) react and/or replace a reactantprecursor.

More specifically, a source precursor is injected into a chamber so thatthe source precursor is excessively adsorbed on a substrate. Then, theexcessive precursor or physisorbed molecules are removed by injecting apurge gas and/or pumping the chamber, causing only chemisorbed moleculesto remain on the substrate. The chemisorbed molecules results in a monomolecule layer. Subsequently, a reactant precursor (or replacementagent) is injected into the chamber. Then, the excessive precursor orphysisorbed molecules are removed by injecting the purge gas and/orpumping the chamber, obtaining a final atomic layer.

In the ALD, a basic unit consisting of these four processes is usuallyreferred to as a cycle. If a chemisorbed layer in a saturation state isobtained, a deposition velocity of about 1 Å per cycle is obtained.However, when a precursor is not adsorbed on the substrate in thesaturation state, a deposition velocity is slower than about 1 Å percycle. If the physisorbed molecule layer is not completely removed but aportion of the physisorbed molecule layer remains on the substrate, thedeposition velocity is increased.

In the ALD, one atomic monolayer is usually formed per cycle. In theALD, a source precursor, a reactant precursor and a purge gas arerepeatedly injected into a chamber, and a valve and a pump are used forexhaustion. For example, the ALD technique has been disclosed in U.S.Pat. Nos. 7,422,636, 7,402,210, 6,511,539 and 6,820,570, which areincorporated by reference herein in their entirety.

If precursors injected into a chamber in each process remain in thechamber, a vapor phase reaction (referred to as a CVD reaction) occursthrough the reaction of a source precursor and a reactant precursor.Therefore, only a valve for ALD operated at a high speed is necessary toperform the ALD, and purging and/or pumping must be performed so that noprecursor remains in the chamber. At this time, the valve used for ALDrequires an extended operation times. For example, operation times ofmore than 10³ for each of the processes of injecting the sourceprecursor, purging, injecting the reactant precursor, purging and thelike are usually necessary to deposit an atomic layer with a thicknessof 100 nm. As a result, the lifetime of the valve is shortened, and itsreliability is decreased. As the number of operation times of the valveoperated at a high speed is increased, problems related to the lifetimeof the valve occur, such as erroneous operations or particles.

However, when a thin film is formed using the ALD, it is important toform the thin film having uniform characteristics (i.e., physical,chemical and electrical characteristics) required to satisfyrequirements of a device. To this end, it is necessary that times atwhich the respective source and reactant precursors reach a substrate beidentical in the injection of the source and the reactant precursor. Inthe cross-flow or traveling-wave type reactor in which precursors usedfor the ALD are injected parallel to a substrate, an adsorptionphenomenon is gradually performed while the substrate is passes from theside adjacent to an injection portion of the precursors and to the sideof an exhaust portion. Therefore, the adsorption phenomenon isrepresented by a function of time. Particularly, for a large-areasubstrate, such a phenomenon becomes more pronounced, and therefore, thecomposition, thickness or property of the thin film varies depending oneach portion of the substrate. Particularly, the compositions,thicknesses or properties of the thin films respectively positioned atthe injection and exhaust portions are different from each other.

In the reactor for receiving the precursors, the precursors are injectedin a direction vertical to the substrate to avoid such a problem.However, when the distance between the injection portion (typically,showerhead) of the precursors and the substrate is short, the thicknessof the thin film is increased or decreased by the proximity phenomenonin the vicinity of a hole of the showerhead through which the precursorsare injected, and therefore, an irregular thin film having a holepattern of the showerhead is obtained. Accordingly, the distance betweenthe injection portion and the substrate need to be sufficiently large.As a result, the space portion of the chamber is increased. Also, alarge amount of precursor is required because a sufficient amount ofprecursor is necessarily filled in the interior of the chamber for thepurpose of saturation adsorption of precursors on a surface of thesubstrate. Also, the source precursors and the reactant precursors donot come in contact with each other so as to avoid a CVD reaction.Therefore, much time is taken to perform sufficient purging and/orpumping to prevent the source precursors or reactant precursors fromremaining in the chamber. In addition, since the source precursors andthe reactant precursors are exhausted through the same exhaust line, areactant byproduct (e.g., powder, gum or the like) is produced by thereaction of these precursors. Therefore, the reliability, durability andeconomy of the device are decreased as well as yielding thinner film.

In U.S. Pat. No. 6,821,563, for example, gas steam flowed through aplurality of gas ports is supplied to a substrate, and purge and pumpports are installed adjacent to each other so that the ALD is performedby purging and pumping while consecutively injecting precursors.However, partitions for isolating or separating the ports from eachother are installed, and pumping ports are positioned at both sides ofeach of the partitions, respectively. Hence, its structure iscomplicated. In addition, since the partitions serve as only physicalbarriers for isolating the ports from each other, there is a structurallimitation in that pumping ports are necessarily positioned at bothsides (or left and right sides) of each of the ports through which theprecursors are injected or purged.

SUMMARY OF THE INVENTION

Embodiments provide a vapor deposition reactor of a closed-loop type,which performs within its interior, a series of processes of adsorbing asource precursor or a reactant precursor on a substrate, desorbingphysisorbed molecule layer of the source precursor or the reactantprecursor and externally exhausting the desorbed molecule layer.

In one embodiment, the vapor deposition reactor includes at least onefirst injection portion. The at least one first injection portioninjects a first material. A first portion of the vapor depositionreactor has a first recess formed therein. The first recess is connectedto the at least one first injection portion to receive the firstmaterial. A second portion is adjacent to the first portion and has asecond recess formed therein. The second recess is connected to thefirst recess so that the first material via the first recess. A thirdportion has a third recess formed therein that is connected to thesecond recess, and receives the first material via the second recess.The pressure of the third recess is maintained lower than the firstrecess by an exhaust portion. A substrate moves across the first recess,the second recess and the third recess to absorb the first material inits surface.

In one embodiment, the first portion includes a plurality of firstrecesses, and the second portion includes a plurality of secondrecesses. The vapor deposition reactor may be configured by sequentiallyconnecting the recesses in one of the first recesses, one of the secondrecesses, the third recess of the third portion, another of the firstrecesses and another of the second recesses.

In one embodiment, the vapor deposition reactor further includes anadditional first portion and an additional second portion. Theadditional first portion and the additional second portion have anadditional first recess and an additional second recess formed therein,respectively. The pressure in the additional second recess is lower thanthe pressure in the additional first recess. The additional first andsecond recesses are filled with a second material. The substrate movesacross the first and second recesses to absorb the second material onthe substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and advantages of the presentinvention will become apparent from the following description ofpreferred embodiments given in conjunction with the accompanyingdrawings, in which:

FIG. 1A is a sectional view of a vapor deposition reactor according toone embodiment.

FIG. 1B is a bottom view of the vapor deposition reactor of FIG. 1A,according to one embodiment.

FIG. 1C is a sectional view of a first portion in the vapor depositionreactor of FIG. 1A, according to one embodiment.

FIG. 1D is a sectional view of a second portion in the vapor depositionreactor of FIG. 1A, according to one embodiment.

FIG. 1E is a sectional view of a third portion in the vapor depositionreactor of FIG. 1A, according to one embodiment.

FIGS. 2A to 2D are partial sectional views of vapor deposition reactors,according to embodiments.

FIG. 3 is a bottom view of a vapor deposition reactor, according to oneembodiment.

FIGS. 4A to 4C are partial sectional views of the vapor depositionreactor of FIG. 3, according to one embodiment.

FIG. 5 is a bottom view of a vapor deposition reactor according to stillanother embodiment.

FIGS. 6A to 6C are partial sectional views of the vapor depositionreactor of FIG. 5, according to one embodiment.

FIGS. 7A to 7C are partial sectional views of a vapor depositionreactor, according to one embodiment.

FIG. 8A is a bottom view of a vapor deposition reactor, according to oneembodiment.

FIGS. 8B and 8C are partial sectional views of the vapor depositionreactor of FIG. 8A, according to one embodiment.

FIGS. 9A and 9B are partial sectional views of a vapor depositionreactor, according to one embodiment.

FIG. 10A is a sectional view of a vapor deposition reactor, according toone embodiment.

FIG. 10B is a bottom view of the vapor deposition reactor of FIG. 10A,according to one embodiment.

FIG. 11 is a sectional view of a vapor deposition reactor, according toone embodiment.

FIG. 12 is a sectional view of a vapor deposition reactor, according toone embodiment.

FIG. 13A is a sectional view of a vapor deposition reactor, according toone embodiment.

FIG. 13B is a bottom view of the vapor deposition reactor of FIG. 13A,according to one embodiment.

FIG. 14 is a sectional view of a vapor deposition reactor, according toone embodiment.

FIG. 15A is a sectional view of a vapor deposition reactor, according toone embodiment.

FIG. 15B is a bottom view of the vapor deposition reactor of FIG. 15A,according to one embodiment.

FIGS. 16A to 16C are flowcharts illustrating method for forming a thinfilm according to embodiments.

FIGS. 17A to 17E are exemplary sectional views of atomic layerdeposition (ALD) equipments including vapor deposition reactors,according to embodiments.

FIGS. 18A to 18D are exemplary plan views of ALD equipments includingvapor deposition reactors, according to embodiments.

FIG. 19 is a schematic view of an experimental apparatus using a vapordeposition reactor, according to one embodiment.

FIG. 20 is a schematic perspective view of a portion of the vapordeposition reactor in the experimental apparatus of FIG. 19, accordingto one embodiment.

FIG. 21A is a schematic sectional view of the experimental apparatus ofFIG. 19, according to one embodiment.

FIG. 21B is a schematic sectional view of a coaxial plasma generator ofthe experimental apparatus of FIG. 19, according to one embodiment.

FIGS. 22A to 22D are scanning electron microscope (SEM) photographs of aTiN thin film formed using a vapor deposition reactor, according to oneembodiment.

FIGS. 23A to 23D are transmission electron microscope (TEM) photographsof a TiN thin film formed using a vapor deposition reactor, according toone embodiment.

FIGS. 24A to 24D are TEM photographs of a TiN thin film formed using avapor deposition reactor, according to one embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Exemplary embodiments now will be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsare shown. This disclosure may, however, be embodied in many differentforms and should not be construed as limited to the exemplaryembodiments set forth therein. Rather, these example embodiments areprovided so that this disclosure will be thorough and complete, and willfully convey the scope of this disclosure to those skilled in the art.In the description, details of well-known features and techniques may beomitted to avoid unnecessarily obscuring the presented embodiments.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of this disclosure.As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. Furthermore, the use of the terms a, an, etc. does not denotea limitation of quantity, but rather denotes the presence of at leastone of the referenced item. The use of the terms “first”, “second”, andthe like does not imply any particular order, but they are included toidentify individual elements. Moreover, the use of the terms first,second, etc. does not denote any order or importance, but rather theterms first, second, etc. are used to distinguish one element fromanother. It will be further understood that the terms “comprises” and/or“comprising”, or “includes” and/or “including” when used in thisspecification, specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art. It will be further understood that terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and the present disclosure, and will notbe interpreted in an idealized or overly formal sense unless expresslyso defined herein.

In the drawings, like reference numerals in the drawings denote likeelements. The shape, size and regions, and the like, of the drawing maybe exaggerated for clarity.

FIG. 1A is a sectional view of a vapor deposition reactor according toan embodiment. FIG. 1B is a bottom view of the vapor deposition reactorof FIG. 1A. A body 9 of the vapor deposition reactor includes a firstportion 10, a second portion 20 and a third portion 30. Recesses orspace formed in the first, second and third portions 10, 20 and 30 maybe connected to one another to allow gas to communicate. The vapordeposition reactor may include one or more injection portions 11 forinjecting a reacting material into the first portion 10. The injectionportions 11 may be connected to a channel 12 through which the reactingmaterial is transported.

For example, when the vapor deposition reactor is used in atomic layerdeposition (ALD), the reacting material may be a source precursor orreactant precursor. The source precursor may be determined depending onthe type of thin film to be ultimately formed in the vapor depositionreactor. For example, the source precursor may be a compound containingatoms for forming a metal, insulator or semiconductor thin film, and anorganic or inorganic compound may all be use as the source precursor.The reactant precursor is a material that forms a metal, oxide, nitride,carbide, material for semiconductor, or the like through reaction and/orreplacement of the reactant precursor with the source precursor, therebyobtaining a thin film. For example, the reactant precursor may includeone or more of H₂O, H₂O₂, O₂, N₂O, NO, O₃, O* radical, NH₃, NH₂—NH₂, N*radical, CO, CO₂, CH₄, C₂H₆, H₂ and H* radical.

In one embodiment, a substrate (not shown) may pass by the first tothird portions 10 to 30 by moving across the vapor deposition reactor sothat an atomic-layer or molecular-layer thin film is formed on thesubstrate. For example, the substrate may be moved in a linear orrotating manner adjacent to a lower portion of the vapor depositionreactor so that a thin film is formed on the substrate. In anotherembodiment, the vapor deposition reactor may be moved with respect tothe substrate with the substrate fixed.

The first and second portions 10 and 20 include square-column-shapedrecesses formed on a bottom portion of the body 9 of the vapordeposition reactor and have predetermined widths W_(E) and W_(C),heights H and z and lengths L. The third portions 30 may havepredetermined width W_(X) and length L, and an upper portion of thethird portion 30 may be connected to an exhaust portion 32 in which anexhaust portion 31 is formed. The structure of the vapor depositionreactor is merely illustrative. That is, the shapes of the first tothird portions 10 to 30 may be configured differently from thosedescribed above depending on the object of the vapor deposition reactor.

The width of each of the first to third portions 10 to 30 herein refersto the dimension of recess formed in the first to third portions 10 to30 parallel to the moving direction of the substrate. Also, the lengthof each of the first to third portions 10 to 30 refers to the dimensionof each of the first to third portions 10 to 30 in the directionperpendicular to the movement direction of the substrate. Also, theheight of each of the first and second portions 10 and 20 refers to thedistance between a lower surface of the body 9 and an inner uppersurface of the corresponding recesses in the first and second portions10 and 20.

Properties of the thin film formed on the substrate may be determined atleast partially based on the width W_(E) and height H of the firstportion 10, the width W_(C) and height z of the second portion 20, thewidth W_(X) of the third portion 30, and the movement velocity v of thesubstrate. For example, assuming that the movement velocity of thesubstrate is v and the width of a corresponding portion through whichthe substrate passes among the first to third portions 10 to 30 is x,the exposure time of the substrate for the corresponding portion isdetermined by the following equation:t=x/v  (1)

The recess of the first portion 10 may be filled with the reactingmaterial injected through the injection portion 11. If the substratemoving at the movement velocity v passes by the lower portion of thefirst portion 10, the substrate is exposed to the reacting material fortime W_(E)/v. As a result, physisorbed and chemisorbed layers of thereacting material may be formed on the substrate. As the width W_(E) ofthe first portion 10 is increased, an increasing amount of the reactingmaterial is supplied to the first portion 10. As the width W_(E) of thefirst portion 10 is decreased, the possibility that the reactingmaterial is adsorbed on the substrate is decreased. Therefore, indesigning the vapor deposition reaction, the width W_(E) of the firstportion 10 may be determined based on the property of the reactingmaterial. As the steam pressure of the reacting material is increased,the width W_(E) of the first portion 10 may be decreased, and/or themovement velocity v of the substrate may be increased. As a result, theamount of reacting material adsorbed on the substrate can be adjustedsince the period during which the substrate resides at the first portion10 is decreased.

The substrate passing by the lower portion of the first portion 10subsequently passes by a lower portion of the second portion 20. Thepressure P_(C) in the recess of the second portion 20 may be relativelylower than the pressure P_(E) in the recess of the first portion 10(P_(C)<P_(E)). As a result, a portion of the reactant precursor adsorbedon the substrate may be desorbed for time W_(C)/v during which thesubstrate passes by the lower portion of the second portion 20. Forexample, the physisorbed layer of the reacting material may be desorbedfrom a surface of the substrate while the substrate passes by the lowerportion of the second portion 20.

The substrate passing by the lower portion of the second portion 20subsequently passes by a lower portion of the third portion 30. Thereacting material desorbed from the substrate while the substrate possesby the second portion 20 may be discharged to the exterior of the vapordeposition reactor through the exhaust portion 31 for time W_(X)/v atwhich the substrate passes by the lower portion of the third portion 30.As a result, the physisorbed layer of the reacting material is at leastpartially removed from the substrate but the chemisorbed layer of thereacting material remains on the substrate. In an embodiment, thepressure P_(X) in the third portion 30 may be relatively lower than thepressure P_(E) in the first portion 10 (P_(X)<P_(E)).

As described above, while a substrate passes by the first to thirdportions 10 to 30 of the vapor deposition reactor, a series of processesis performed. During the series of processes, the substrate is exposedto a reacting material such as a source precursor and/or reactantprecursor, and the reacting material is adsorbed in the surface of thesubstrate. Then, a physisorbed layer of the reacting material isdesorbed from the substrate for at least partially removal from thesubstrate, and a chemisorbed layer of the reacting material is formed onthe substrate.

The aforementioned processes may be performed using a source precursoras the reacting material in one vapor deposition reactor, and theaforementioned processes may be performing using a reactant precursor asthe reacting material in a subsequent vapor deposition reactor. As aresult, the substrate passes by four processes of adsorbing a sourceprecursor, removing a physisorbed layer, adsorbing a reactant precursorand removing the physisorbed layer to form a thin film on the substrate.The produced thin film may be an atomic layer or mono molecule layer ormay include a plurality of molecule layers. The moving velocity of thesubstrate that passes by the vapor deposition reactor filled with thesource precursor may be controlled to be identical to or different fromthe moving velocity of the substrate that passes by the vapor depositionreactor filled with the reactant precursor.

The aforementioned processes may also be performed using a single vapordeposition reactor by injecting a source precursor and a reactantprecursor alternately into the recess of the first portion 10 of thevapor deposition reactor. For example, a valve for ALD (not shown) andits driving unit may be connected to the channel 12. The sourceprecursor and the reactant precursor may be injected in an alternatingmanner according to the opening or closing of the valve. Further, aninert gas may be injected as a purge gas after the injection of each ofthe source precursor and the reactant precursor. In this case, thesubstrate that passes by the first portion 10 undergoes the followingfour steps: adsorbing the source precursor, injecting the inert gas,adsorbing the reactant precursor and injecting the inert gas. As aresult, an atomic layer thin film may be formed on the substrate. Aportion of the precursor adsorbed on the substrate and/or the inert gasmay be desorbed from the substrate and discharged while the substratepasses by the second portion 20 and the third portion 30.

When a source precursor, an inert gas and a reactant precursor areinjected into a single vapor deposition reactor in an alternatingmanner, the moving velocity of the substrate that passes by the singlevapor deposition reactor may be relatively smaller than the movingvelocity of a substrate that passes by another vapor deposition reactorinto which only one of the source precursor and the reactant precursoris injected. For example, the moving velocity of the substrate may becontrolled such that the substrate is sequentially exposed to a sourceprecursor, an inert gas, a reactant precursor and an inert gas while thesubstrate passes by one first portion 10. When the ALD is performedaccording to the aforementioned processes, an atomic layer thin film maybe formed using the single vapor deposition reactor. Thus, the number ofatomic layer thin films which are formed using the same number of vapordeposition reactors may be increased.

Meanwhile, the lower portion of the vapor deposition reactor may bespaced apart from the substrate. For example, the lower portion of thevapor deposition reactor may be spaced apart from the substrate at about0.5 mm to a few millimeters. Alternatively, the interval between thelower portion of the vapor deposition reactor and the substrate may beabout 1 mm. When the interval between the lower portion of the vapordeposition reactor and the substrate is sufficiently small (e.g., whenthe interval between the lower portion of the vapor deposition reactorand the substrate is about 1 mm or less), the amount of the reactingmaterial leaked to the exterior from the vapor deposition reactor may benegligible. However, in order to minimize the amount of the leakedreacting material, an inert gas may be injected around the vapordeposition reactor, or pumping may be performed around the vapordeposition reactor. In this case, the inert gas may include one or moregas selected from the group consisting of N₂, Ar and He.

The shapes of the first and second portions 10 and 20 affect effectivedesorption of the reacting material adsorbed on the substrate.Experiments were conducted using the first and second portions 10 and 20having various shapes to derive parameters related to the desorption ofthe reacting material. For example, trimethylaluminum (TMA) issufficiently adsorbed on a substrate maintained at about 250° C. for onesecond, and the substrate is then passed by the lower portion of thevapor deposition reactor. At this time, an inert gas such as Ar gas maybe injected into the first portion 10. Since the pressure of the Ar gasis lowered while the substrate passes by a lower portion of the secondportion 20, molecules of the TMA adsorbed on the substrate are desorbed,and the desorbed molecules of the TMA may be exhausted together with theAr gas to the exterior via the third portion 30. In this case, thedesorption is examined while changing the shapes of the first and secondportions 10 and 20. Alternatively, the desorption may be examined usingthe thickness of an atomic-layer thin film formed by the vapordeposition reactor.

The correlation of the width W_(E) of the first portion 10, the height zof the recess in the second portion 20 and the desorption are examinedusing a vapor deposition reactor in which the height H of the firstportion 10 is greater than the width W_(E) of the first portion 10. As aresult, the results of the following Table 1 were obtained. At thistime, the experiment is performed in a state where the width W_(E) ofthe first portion 10 was identical to the width W_(X) of the thirdportion 30 and the width W_(C) of the second portion 20 was about ½ ofthe width W_(E) of the first portion 10.

TABLE 1 Item 0 < z ≦ W_(E)/3 W_(E)/3 < z ≦ 2W_(E)/3 2W_(E)/3 < z ≦ W_(E)Desorption Yes Yes Negligible phenomenon Material on ChemisorbedChemisorbed Chemisorbed substrate molecules molecules + some ofmolecules + physisorbed physisorbed molecules molecules DepositionFormation of mono Formation of plural Formation of characteristic ofatomic-layer thin atomic-layer thin films incomplete atomic- thin filmthrough film by chemisorbed by chemisorbed layer layer thin filmadsorption layer and physisorbed layer

Also, the correlation of the width W_(C) of the second portion 20, theheight z of the second portion 20 and the desorption are examined usinga vapor deposition reactor in which the height H of the first portion 10is greater than the width W_(E) of the first portion 10. As a result,following Table 2 was obtained. The experiment was performed in a statewhere W_(E) of the first portion 10 is identical to the width W_(X) ofthe third portion 30 and the height z of the second portion 20 is about½ of the width W_(E) of the first portion 10.

TABLE 2 Item 0 < W_(C) ≦ 0.5z 0.5z < W_(C) ≦ 3z W_(C) > 3z DesorptionNegligible Yes Yes phenomenon Material on Chemisorbed layer +Chemisorbed layer + Chemisorbed layer substrate physisorbed layerportion of physisorbed layer Deposition Formation of Formation of pluralFormation of mono characteristic of incomplete atomic- atomic-layer thinfilms atomic-layer thin thin film through layer thin film by thechemisorbed layer film by chemisorbed adsorption and physisorbed layerlayer

On the other hand, the correlation of the height H of the first portion10, the height z of the second portion 20 and the desorption areexamined using a vapor deposition reactor in which the height H of thefirst portion 10 is smaller than the width W_(E) of the first portion10. As a result, following Table 3 was obtained. The experiment isperformed in a state where the width W_(C) of the second portion 20 isabout ½ of the width W_(X) of the third portion 30.

TABLE 3 Item 0 < z ≦ H/3 H/3 < z ≦ 2H3 2H3 < z ≦ H Desorption Yes YesNegligible phenomenon Material on Chemisorbed layer Chemisorbed layer +Chemisorbed layer + substrate portion of physisorbed layer physisorbedlayer Deposition Formation of mono Formation of plural Formation ofcharacteristic of atomic-layer thin atomic-layer thin films incompleteatomic- thin film through film by chemisorbed by chemisorbed layer layerthin film adsorption layer and physisorbed layer

In Tables 1 to 3, when the height z of the second portion 20 is zero,the reacting material is leaked and diffused around the vapor depositionreactor, and hence, the desorption caused by the second portion 20cannot be assessed. The result obtained when the height z of the secondportion 20 is zero is not represented in Tables 1 to 3.

As can be seen from the results of Tables 1 to 3, the desorption effectis increased as the height z of the second portion 20 is decreased.Also, it can be seen that the desorption effect is increased as thewidth W_(C) of the second portion 20 is increased when the height z ofthe second portion 20 is constant. In an embodiment, the width W_(C) ofthe second portion 20 may be greater than about ½ of the height z of thesecond portion 20. In another embodiment, the height z of the secondportion 20 may be greater than zero and equal to or less than ⅔ of thewidth W_(E) of the first portion 10. Alternatively, the height z of thesecond portion 20 may be greater than zero and equal to or less than ⅔of the height H of the first portion 10. In still another embodiment,the height z of the second portion 20 may be equal to or less than thewidth W_(X) of the third portion 30.

FIG. 1C is a sectional view of the first portion 10 in the vapordeposition reactor described above. FIG. 1D is a sectional view of thesecond portion 20 in the vapor deposition reactor. FIG. 1E is asectional view of the third portion 30 in the vapor deposition reactor.

Referring to FIG. 1E, to maximize conductance while the substrate passesby the third portion 30, the curve connected to the exhaust portion 31in the third portion 30 may be configured to have different curvaturesfrom one another at a plurality of portions 301, 302 and 303. Forexample, since the curvature at one portion 301 has a negative (−)value, the portion 301 has a shape that is concave outward from thethird portion 30. Meanwhile, since the curvature at another portion 303has a positive (+) value, the portion 303 has a shape that is convexedinward to the third portion 30. The other portion 302 corresponds to aninflection point between the two portions 301 and 303.

FIG. 2A is a partial sectional views of a second portion 20 in a vapordeposition reactor according to an embodiment. A first portion 10, asecond portion 20 and a third portion 30 are provided at a lower portionof a body 209 of the vapor deposition reactor. The second portion 20 ispositioned between first and third portions 10 and 30. The secondportion has a recess defined by a partition 200 having a predeterminedwidth W_(C) and is positioned at a predetermined distance z from asubstrate 40. The pressure P₂ of the second portion 20 is lower than thepressure P₁ in the first portion 10. As a result, while the substratepasses by the second portion 20, a physisorbed layer of a reactingmaterial adsorbed on the substrate 40 may be desorbed from the substrate40 due to the lower pressure.

In the second portion 20 shown in FIG. 2A, the surface of the partition200 is formed parallel to a surface of the substrate 40. However, inanother embodiment, the surface of the partition 200 may be formed tohave a curved surface shape having varying height with respect to thesurface of the substrate 40. For example, FIG. 2B shows a second portion20 defined by a partition 200 having a surface that is convexed towardthe substrate 40. The partition 200 shown in FIG. 2B has a lower surfacethat is symmetric about the center thereof. However, in anotherembodiment, the lower surface of the partition 200 may be formedasymmetric. For example, FIG. 2C shows a second portion 20 defined by apartition 200 formed to have a surface that has relatively a largeheight gradient at a region adjacent to the first portion 10. To thecontrary, FIG. 2D shows a second portion 20 defined by a partition 200formed to have a surface that has a relatively large height gradient ata region adjacent to the third portion 30.

Meanwhile, in case of a rotary type vapor deposition reactor in which aplurality of substrates are loaded and then deposited while beingrotated, an angular velocity is varied depending on the radius ofrotation. For example, when the substrates are loaded on a rotatingtable and the table is activated, the angular velocity at the outside ofthe rotating table is greater than that at the inside of the rotatingtable. In this case, the time during which a portion of the substrate atthe outside of the rotating table is subject to the processing by thevapor deposition reactor is different from the time during which anotherportion of the substrate inside the rotating table is exposed to thevapor deposition reactor, and therefore, the desorption rates of thereacting material at both of the portions are different from each other.

FIG. 3 is a bottom view of a vapor deposition reactor that may be usedwhen the velocity at which a substrate passes by the vapor depositionreactor is different at regions. FIG. 4A is a sectional view of a secondportion taken along line A-A′ of FIG. 3. FIG. 4B is a sectional view ofthe second portion taken along line B-B′ of FIG. 3. FIG. 4C is asectional view of the second portion taken along line C-C′ of FIG. 3.

Referring to FIGS. 4A to 4C, the height Z₃ of the recess in the secondportion 20 at portion C-C′ of the vapor deposition reactor may besmaller than the height Z₁ of the recess in the second portion 20 atportion A-A′ of the vapor deposition reactor (Z₁>Z₃). The height Z₂ ofthe second portion 20 at portion B-B′ of the vapor deposition reactormay have a value between the heights Z₁ and Z₃ of the second portion 20at both end portions of the vapor deposition reactor (Z₁>Z₂>Z₃). As theheight of the second portion 20 is decreased, the pressure in the secondportion 20 is decreased, and therefore, the desorption rate of thereacting material is increased on the substrate that passes by acorresponding portion. Thus, a portion moving at a greater velocitypasses by the portion C-C′ of the vapor deposition reactor, and aportion moving at a lower velocity passes by the portion A-A′ of thevapor deposition reactor, thereby equalizing the desorption rate acrossthe entire region of the substrate.

FIG. 5 is a bottom view of another vapor deposition reactor that may beused when the velocity at which a substrate passes by the vapordeposition reactor differs at regions. FIG. 6A is a sectional view of asecond portion taken along line A-A′ of FIG. 5. FIG. 6B is a sectionalview of the second portion taken along line B-B′ of FIG. 5. FIG. 6C is asectional view of the second portion taken along line C-C′ of FIG. 5.

Referring to FIG. 6A, a surface of a partition 200 at portion A-A′ ofthe vapor deposition reactor may be parallel to a substrate 40. In thiscase, the entire width of the partition 200 becomes the effective widthW_(eff1) of the second portion 20 at the portion A-A′. Referring to FIG.6B, the surface of the partition 200 at portion B-B′ of the vapordeposition reactor may have a gradient with respect to the substrate 40.In this case, the effective width W_(eff2) of the second portion 20 atthe portion B-B′ is limited to a region in which the surface of thepartition 200 is parallel to the substrate 40, and therefore, is smallerthan the effective width W_(eff1) of the second portion 20 at theportion A-A′ (W_(eff1)>W_(eff2)). Referring to FIG. 6C, as the gradientof the partition 200 at portion C-C′ of the vapor deposition reactor ismore increased, the effective width W_(eff3) of the second portion 20 atthe portion C-C′ is smaller than the effective width W_(eff2) of thesecond portion 20 at the portion B-B′ (W_(eff2)>W_(eff3)).

FIGS. 7A to 7C are sectional views of a second portion in a vapordeposition reactor according to still another embodiment. Referring toFIGS. 7A to 7C, the vapor deposition reactor according to the embodimentmay have a structure obtained by combining the structure shown in FIGS.4A to 4C and the structure shown in FIGS. 6A to 6C. That is, the heightof a second portion 20 may be gradually decreased from one end portionto the other end portion of the vapor deposition reactor (Z₁>Z₂>Z₃).Also, As a substrate 40 passes from the one end portion to the other endportion of the vapor deposition reactor, the gradient of a partition 200is increased, and therefore, the effective width of the second portion20 may be gradually decreased (W_(eff1)>W_(eff2)>W_(eff3)).

Meanwhile, the shape of the vapor deposition reactor may be modifiedbased on the type and property of a reacting material. Particularly,since adsorption and desorption characteristics differ depending on theshape of the second portion, the shape of the second portion may beoptimized based the reacting material used. For example, when aprecursor with a low vapor pressure and/or a high viscosity is used asthe reacting material, a structure with a relatively high desorptionrate is necessary. When, a precursor with a high vapor pressure and/or alow viscosity is used as the reacting material, a structure with arelatively low desorption rate is necessary. The characteristics of thesecond portion can be varied for different reacting materials in onevapor deposition reactor.

FIG. 8A is a bottom view of a vapor deposition reactor configured tovary characteristics of a second portion according to still anotherembodiment. The vapor deposition reactor according to the embodiment mayinclude a partition 200 that defines the second portion and anadjustable wing 210 forming at least a partial region of the partition200.

FIG. 8B is a sectional view of the second portion in the vapordeposition reactor of FIG. 8A. FIG. 8C is a sectional view of the secondportion when the adjustable wing 210 is moved to a drive position in thevapor deposition reactor of FIG. 8A. If the adjustable wing 210 is movedfrom an initial position shown in FIG. 8B to a driving position shown inFIG. 8C, the effective height Z_(eff) is decreased as compared with theinitial height Z₀. Since the path of a gas that passes by the secondportion 20 is lengthened due to the adjustable wing 210, the pressure inthe region 25 adjacent to the adjustable wing 210 is further decreased.Thus, although the vapor deposition reactor having the same exhaustingability is used, the desorption rate of a reacting material can bechanged by the adjustable wing 210, and accordingly, the depositioncharacteristic of a thin film can be changed. Also, reacting materialswith different chemical properties such as viscosity or vapor pressurecan be used in the same vapor deposition reactor.

Meanwhile, when the adjustable wing 210 is positioned at the drivingposition as shown in FIG. 8C, the reacting material desorbed from asubstrate 40 may enter into a gap between the partition 200 and theadjustable wing 210. To address such a problem, an inert gas may beinjected as a curtain gas between the partition 200 and the adjustablewing 210.

FIG. 9A is a sectional view of a second portion 20 in a vapor depositionreactor including an injection portion of curtain gas between apartition and an adjustable wing. FIG. 9B is a sectional view of thesecond portion when the adjustable wing 210 is moved to a drive positionin the vapor deposition reactor of FIG. 9A. A channel 22 and one or moreinjection portions 21 may be formed at a region in the partition 200above the adjustable wing. An inert gas may be injected as a curtain gasthrough the injection portion 21. For example, the inert gas may includeone or more selected from the group consisting of N₂, Ar and He. Theinert gas is injected at a higher pressure than that in the secondportion 20, so that it is possible to prevent a reacting materialdesorbed from a substrate 40 from entering into the gap between thepartition 200 and the adjustable wing 210.

In the embodiment described with reference to FIGS. 8 and 9, theadjustable wing 210 is inserted into the partition 200 to change theshape of a partial region of the second portion 20. However, in anotherembodiment, the position of the partition 200 may be moved along thedirection in which the substrate 40 advances. If the position of thepartition 200 is changed, the ratio W_(E)/W_(C) of the width W_(E) ofthe first portion 10 and the width W_(C) of the second portion 20 ischanged, and therefore, the amount of the reacting material adsorbed onthe substrate 40 is changed. For example, when the partition 200 movestoward the first portion 10 from the initial position thereof, thedesorption amount of the reacting material may be decreased in the firstportion 10. On the other hand, when the partition 200 moves toward thesecond portion 20 from the initial position thereof, the adsorptionamount of the reacting material may be increased in the first portion10.

In still another embodiment, the adjustable wing 210 may change thedistance z between the partition 200 and the substrate 40, i.e., theheight z of the second portion 20. If the distance between the partition200 and the substrate 40 is decreased, the height z of the secondportion 20 is decreased, and the pressure in the second portion 20 isdecreased. Therefore, the desorption rate of the reacting material fromthe substrate 40 may be increased. On the other hand, if the distancebetween the partition 200 and the substrate 40 is increased, the heightz of the second portion 20 is increased, and the pressure in the secondportion 20 is increased. Therefore, the desorption rate of the reactingmaterial from the substrate 40 may be decreased.

According to the aforementioned embodiments, reacting materials withdifferent viscosity can be used in the vapor deposition reactor havingthe same size by using the adjustable wing. Also, the depositioncharacteristic of an atomic-layer thin film and/or the desorption rateof adsorbed molecules can be changed by using the vapor depositionreactor.

FIG. 10A is a sectional view of a vapor deposition reactor according tostill another embodiment. FIG. 10B is a bottom view of the vapordeposition reactor of FIG. 10A. The vapor deposition reactor includes abody 309. One or more first injection portions 11 for injecting areacting material, and one or more second injection portions 13 forinjecting an inert gas are formed in the body 309. The first injectionportion 11 may be connected to a first channel 12 through which thereacting material is transported, and a second injection portion 13 maybe connected to the second channel 14 through which the inert gas istransported. The first channel 12 may be connected to a transfer pipe120 through which the reacting material is injected from the exterior ofthe vapor deposition reactor, and the second channel 14 may be connectedto a transfer pipe 140 through which the inert gas is injected from theexterior of the vapor deposition reactor. The first and second injectionportions 11 and 13 are provided in a first portion 10 to fill the recessin the first portion 10 with the reacting material and the inert gas.

As shown in FIG. 10A, the second injection portion 13 is placed furtheraway from a substrate (i.e., the second injection portion 13 has ahigher height) than the first injection portion 11. However, theembodiment is provided only for illustrative purposes. In anotherembodiment, as shown in FIG. 11, the vapor deposition reactor includes abody 409 having a first injection portion 11 and a second injectionportion 13 formed therein where the second injection portion 13 isformed at a position closer from the substrate than the first injectionportion 11. Alternatively, as shown in FIG. 12, the first and secondinjection portions 11 and 13 may be formed at substantially the samedistance from the substrate.

By using the vapor deposition reactors as described above, an inert gascan be injected together with a source precursor or reactant precursorinto the recess of the first portion 10. The inert gas functions topurge the reacting material adsorbed on the substrate while thesubstrate passes by the second portion 20, and therefore, the amount ofphysisorbed layer that remains on the substrate is less than that ofphysisorbed layer that remains on the substrate when only the sourceprecursor or reactant precursor is used. Thus, the vapor depositionreactor is advantageous in formation of an atomic mono-layer.

FIG. 13A is a sectional view of a vapor deposition reactor having a body609 for injecting an inert gas together with a reacting materialaccording to still another embodiment. FIG. 13B is a bottom view of thevapor deposition reactor of FIG. 13A. One or more injection portions 11and one or more second injection portions 13 may be alternately arrangedon one line perpendicular to the direction in which a substrate ismoved.

FIG. 14 is a sectional view of a vapor deposition reactor for injectingan inert gas together with a reacting material according to stillanother embodiment. Referring to FIG. 14, the vapor deposition reactormay include a body 709 in which only one injection portion 11 and onechannel 12 are formed. However, a transfer pipe 120 connected to thechannel 12 to allow a material to be injected therethrough may bedivided into two transfer pipes 121 and 122 different from each other bya valve V₃. The flow of the material in each of the transfer pipes 121and 122 may be controlled by valves V₁ and V₂.

By using the vapor deposition reactor, the valves V₁ to V₃ are opened orclosed so that two different materials (e.g., a reacting material and aninert gas) can be injected into the first portion 10 through the oneinjection portion 11 and the one channel 12. In this case, the reactingmaterial and the inert gas can be simultaneously injected into therecess of the first portion 10 by simultaneously opening or closing thevalves V₁ and V₂. Alternatively, the reacting material and the inert gasmay be separately injected into the first portion 10 by alternatelyopening or closing the valves V₁ and V₂. Meanwhile, a plurality of firstportions may be disposed in one vapor deposition reactor so that asource precursor and a reactant precursor are all injected onto asubstrate in the one vapor deposition reactor. FIG. 15A is a sectionalview of a vapor deposition reactor including a body 809 with a pluralityof first portions according to still another embodiment. FIG. 15B is abottom view of the vapor deposition reactor of FIG. 15A.

Referring to FIGS. 15A and 15B, the body 809 of the vapor depositionreactor may include two first portions 10 and 10′, two second portions20 and 20′, and a third portion 30. The two second portions 20 and 20′may be disposed at both sides of the third portion 30, respectively. Thetwo first portions 10 and 10′ may be disposed at both outsides of thesecond portions 20 and 20′, respectively. That is, the first portion 10,the second portion 20, the third portion 30, the second portion 20′ andthe first portion 10′ are sequentially arranged in the vapor depositionreactor. Also, the third portion 30 is shared with the second portions20 and 20′ and the first portions 10 and 10′ placed at different sidesof the third portion 30.

First injection portions 11 and 11′ may be formed in the respectivefirst portions 10 and 10′. The first injection portions 11 and 11′ maybe connected to channels 12 and 12′, respectively. A reacting materialmay be injected into the first portion 10 or 10′ through the firstinjection portion 11 or 11′. By using the vapor deposition reactorhaving the two first portions 10 and 10′ positioned in the vapordeposition reactor, the reacting material can be adsorbed twice on thesubstrate while a substrate passes by the one vapor deposition reactor.

As an example, a source precursor may be injected into the first portion10, and a reactant precursor may be injected into the first portion 10′.While the substrate that passes by the vapor deposition reactor passesby the first portion 10, the source precursor is adsorbed on thesubstrate. While the substrate passes by the second portion 20, thethird portion 30 and the second portion 20′, a physisorbed layer of thesource precursor is desorbed and exhausted. While the substrate passesby the first portion 10′, the reactant precursor is reacted and/orreplaced with the source precursor on the substrate, thereby forming anatomic-layer thin film. As described above, the formation of theatomic-layer thin film is described as an example. However, it will beapparent that chemical vapor deposition (CVD) may also be performedusing the vapor deposition reactor.

Second injection portions 13 and 13′ may be further formed in therespective first portions 10 and 10′. The second injection portions 13and 13′ may be connected to channels 14 and 14′, respectively. An inertgas may be injected into the first portion 10 or 10′ through the secondinjection portion 13 or 13′. When the inert gas is injected togetherwith the source precursor or the reactant precursor, it functions topurge the physisorbed layer adsorbed on the substrate while thesubstrate passes by the second portion 20 and 20′ and the third portion30 so that the desorption is more effectively performed. Thus, theamount of the physisorbed layer on the substrate is less than that ofthe physisorbed layer on the substrate when only the source precursor orreactant precursor is injected. Accordingly, it is advantageous information of an atomic mono-layer.

Meanwhile, the reactant precursor physisorbed after forming theatomic-layer thin film remains on the substrate that passes by the vapordeposition reactor. Subsequently, if the substrate is passed throughanother vapor deposition reactor, the reactant precursor physisorbed onthe substrate is reacted and/or replaced with a source precursorinjected from the new vapor deposition reactor, thereby forming a thinfilm. Thus, the deposition velocity of the thin film can be increased.This is referred to as a pseudo-ALD mode.

Meanwhile, as another example, a source precursor (or reactantprecursor) may be injected as a reacting material into the recess of thefirst portion 10, and only an inert gas may be injected into the recessof the first portion 10′ with no reacting material. In this case, thereacting material is adsorbed on a substrate while the substrate passesby the first portion. While the substrate passes by the second portion20, the third portion 30 and the second portion 20′, the reactingmaterial is desorbed and exhausted. The desorption of the reactingmaterial is accelerated by the inert gas injected into the first portion10′, so that an adsorbed layer with a superior quality can be obtained.When an atomic-layer thin film is to be formed, an additional vapordeposition reactor is necessary for the purpose of the adsorbing thereactant precursor (or source precursor). However, an atomic-layer thinfilm with excellent characteristics can be formed.

The vapor deposition reactor shown in FIGS. 15A and 15B is configured sothat two reactors are symmetrically arranged opposite to each other witha third portion interposed therebetween, on the basis of the shape ofthe vapor deposition reactor shown in FIGS. 10A and 10B. However, thevapor deposition is provided only for illustrative purposes. That is,the vapor deposition reactor may be configured so that two reactors arearranged based on the shapes of the aforementioned embodiments describedwith reference to FIGS. 1 to 14.

FIG. 16A is a flowchart illustrating a method for forming a thin film,according to an embodiment. A reacting material is injected S11 into afirst portion of the vapor deposition reactor. For example, the reactingmaterial may be a source precursor and/or reactant precursor. In anembodiment, an inert gas may be injected S11 together with the reactingmaterial into the first portion in the process.

Subsequently, a substrate is moved S12 with respect to the first portionso that the reacting material is adsorbed on a surface of the substrate.At this time, chemisorbed and physisorbed layers of the reactingmaterial are formed on the substrate. The relative movement of thesubstrate with respect to the first portion may be performed by movingthe substrate to be adjacent to the vapor deposition reactor in thestate that the vapor deposition reactor is fixed. Alternatively, thevapor deposition reactor may be moved in the state that the substrate isfixed.

Subsequently, the substrate is moved S13 with respect to a secondportion so that the physisorbed layer of the reacting material isdesorbed from the substrate. To this end, the pressure in the secondportion may be lower than that in the first portion. Also, thedesorption amount of the physisorbed layer may be adjusted bycontrolling the position, width and height of the second portion and/orthe position of an adjustable wing in the second portion. The entirephysisorbed layer may be removed from the substrate. Alternatively, thedeposition velocity may be increased by allowing a part of thephysisorbed layer to remain on the substrate.

Subsequently, the substrate is moved with respect to a third portion sothat the desorbed reacting material is exhausted S14 to the exterior ofthe vapor deposition reactor through an exhaust portion. As a result,the reacting material physisorbed on the substrate can be at leastpartially removed. Through the aforementioned processes, a thin filmincluding the chemisorbed layer of the reacting material can be formedon the substrate.

When the aforementioned processes S11 to S14 are repeatedly performedwhile exchanging the reacting material, e.g., when the aforementionedprocesses S11 to S14 are performed by alternately using the sourceprecursor and the reactant precursor as the reacting material in processS11, an atomic-layer thin film can be formed on the substrate.Alternatively, the source precursor and the reactant precursor may beinjected alternately into the first portion as the reacting material inthe single process S11. As a result, an atomic layer thin film may beformed on the substrate when the aforementioned processes S11 to S14 areperformed once. In this case, an inert gas may be injected as a purgegas after the injection of each of the source precursor and the reactantprecursor.

FIG. 16B is a flowchart illustrating a method for forming a thin filmaccording to another embodiment. The method of FIG. 16B may be performedusing two vapor deposition reactors. For example, the method may beperformed using two vapor deposition reactors according to theembodiment described with reference to FIGS. 1 to 14.

Referring to FIG. 16B, a source precursor and an inert gas are injectedinto a first portion of a first reactor, and a substrate is moved S12with respect to the first portion of the first reactor. As a result, thesource precursor can be adsorbed on a surface of the substrate.Meanwhile, in another embodiment, only the source precursor may beinjected S21 with no inert gas in the process.

The substrate is moved S22 with respect to a second portion of the firstreactor. At this time, the pressure in the second portion may be lowerthan that in the first portion. Then, the substrate is move S23 withrespect to a third portion of the first reactor. While the substratepasses by the second and third portions, a physisorbed layer of thesource precursor adsorbed on the substrate is at least partiallydesorbed from the substrate and exhausted to the exterior of the firstreactor.

A reactant precursor and an inert gas are injected into a first portionof a second reactor, and the substrate is moved S24 with respect to thefirst portion of the second reactor. As a result, the reactant precursoris adsorbed on the surface of the substrate, and the source precursoradsorbed on the substrate is reacted with the reactant precursoradsorbed on the substrate, thereby forming an atomic-layer thin film.Meanwhile, in another embodiment, only the reactant precursor may beinjected S24 with no inert gas in the process.

The substrate is moved with respect to a second portion S25 of thesecond reactor (S25). At this time, the pressure in the second portionmay be lower than that in the first portion. Then, the substrate ismoved S26 with respect to a third portion of the second reactor. Whilethe substrate passes by the second and third portions, a portion of thereactant precursor may be desorbed from the substrate and then exhaustedto the exterior of the second reactor.

The aforementioned processes (S21 to S26) are performed until anatomic-layer thin film with a final thickness is formed S27, therebyforming an atomic-layer thin film with a desired thickness.

FIG. 16C is a flowchart illustrating a method for forming a thin filmaccording to still another embodiment. The method of FIG. 16 may beperformed using a vapor deposition reactor including two first portions.For example, the method may be performed using the vapor depositionreactor according to the embodiment described with reference to FIGS.15A and 15B.

Referring to FIG. 16C, a source precursor and an inert gas are injectedS31 into a primary first portion of the vapor deposition reactor, and asubstrate is moved S31 with respect to the primary first portion. As aresult, the source precursor can be adsorbed on a surface of thesubstrate. Meanwhile, in another embodiment, only the source precursormay be injected S31 with no inert gas in the process.

The substrate is moved S32 with respect to a primary second portion. Atthis time, the pressure in the second portion may be lower than that inthe first portion. Then, the substrate is moved S33 with respect to athird portion. Then, the substrate is move S34 with respect to secondarysecond portion. While the substrate passes by the two second portionsand the third portion, a physisorbed layer of the source precursoradsorbed on the substrate is at least partially desorbed and exhaustedto the exterior of the vapor deposition reactor.

A reactant precursor and an inert gas are injected S35 into a secondaryfirst portion of the vapor deposition reactor, and the substrate ismoved S35 with respect to the secondary first portion. As a result, thereactant precursor is adsorbed on the surface of the substrate, and thesource precursor adsorbed while the substrate passes by the primaryfirst portion is reacted with the reactant precursor, thereby forming anatomic-layer thin film on the substrate. In another embodiment, only thereactant precursor may be injected S35 with no inert gas in the process.

The aforementioned processes (S31 to S35) are performed until anatomic-layer thin film with a final thickness is formed S36, therebyobtaining an atomic-layer thin film with a desired thickness.

FIG. 17A is a sectional view showing an example in which a vapordeposition reactor according to an embodiment is applied to an atomiclayer deposition (ALD) equipment. The ALD equipment may be configured sothat one or more vapor deposition reactors 1 and 2 each having a first,second and third portions 10, 20 and 30 are disposed in a chamber 5. Asubstrate 40 is supported by a susceptor 400, and is moved to passthrough a lower portion of each of the vapor deposition reactors. Theinterior of the chamber 5 may be controlled to be in a vacuum stateusing a pump or the like. The interior of the chamber 50 may be filledwith a filler 50 except for a region adjacent to the substrate 40. Thefiller 50 may be made of the same material as the outer wall of thechamber 5.

In the ALD equipment, a source precursor and an inert gas may be filledin a first portion of a first vapor deposition reactor 1. Also, areactant precursor and an inert gas may be filled in a first portion 10of a second vapor deposition reactor 2. As the substrate 40 passes bythe first portion 10 of the first vapor deposition reactor 1, the sourceprecursor may be adsorbed on the substrate 40. Subsequently, as thesubstrate 40 passes by second and third portions 20 and 30 of the firstvapor deposition reactor 1, pressure is lowered. Thus, a physisorbedlayer of the source precursor adsorbed on the substrate 40 is desorbedfrom the substrate 40 and exhausted to the exterior of the first vapordeposition reactor 1.

Subsequently, as the substrate passes by the first portion 10 of thesecond vapor deposition reactor 2, the reactant precursor may beadsorbed on the substrate 40. The reactant precursor is reacted with thesource precursor adsorbed on the substrate, thereby forming anatomic-layer thin film. Subsequently, as the substrate 40 passes bysecond and third portions 20 and 30 of the second vapor depositionreactor 2, the reactant precursor is at least partially desorbed fromthe substrate 40 and exhausted to the exterior of the second vapordeposition reactor 2. At this time, the source precursor and thereactant precursor are injected into and exhausted from the first andsecond vapor deposition reactors 1 and 2, respectively. Therefore, thesource precursor and the reactant precursor do not come in contact witheach other. Thus, it is possible to minimize a reactant byproduct suchas powder or gum or reactant product generated in an exhaust pipe.

FIG. 17B is a sectional view showing an example in which a vapordeposition reactor according to another embodiment is applied to the ALDequipment. The vapor deposition reactor is similar to that shown in FIG.17A, but the first and second vapor deposition reactors 1 and 2 arespaced apart from each other at a predetermined interval by the filler50. Thus, it is possible to minimize mixing of the source precursorinjected into the first vapor deposition reactor 1 with the reactantprecursor injected into the second vapor deposition reactor 2. At thistime, the interval between the first and second vapor depositionreactors 1 and 2 may be appropriately determined based on the intervalbetween the substrate 40 and the first and second vapor depositionreactors 1 and 2, the performance of a pump (not shown) for pumping thechamber 5, the characteristics of the source precursor and the reactantprecursor, and/or the like.

FIG. 17C is a sectional view showing an example in which a vapordeposition reactor according to still another embodiment is applied tothe ALD equipment. Referring to FIG. 17C, the vapor deposition reactoris similar to that shown in FIG. 17B, but one or more injection portions51 and a channel 52 connected to the injection portions 51 are formed inthe filler 50 between the first and second vapor deposition reactors 1and 2. An inert gas may be injected through the channel 52 and theinjection portions 51. The possibility that gas is to be mixed betweenthe first and second vapor deposition reactors 1 and 2 can be morereduced by the inert gas.

FIG. 17D is a sectional view showing an example in which a vapordeposition reactor according to still another embodiment is applied tothe ALD equipment. Referring to FIG. 17D, the vapor deposition reactoris similar to that shown in FIG. 17C, but injection portions 51 and achannels 52 for injecting the inert gas are formed not only between thefirst and second vapor deposition reactors 1 and 2 but also at outsidesof the first and second vapor deposition reactors 1 and 2.

In the ALD equipment shown in FIGS. 17C and 17D, the interior of thechamber 5 is pumped by a separate pump (not shown). Therefore, the inertgas injected through the injection portions 51 may be controlled to havea higher pressure than that the pressure in the first portion 10 of eachof the first and second vapor deposition reactors 1 and 2. As a result,the pressure around the first and second vapor deposition reactors 1 and2 may be higher than that in the first portion 10 of the first andsecond vapor deposition reactors 1 and 2. Accordingly, leaking of thesource precursor and the reactant precursor to the exterior of the firstand second vapor deposition reactors 1 and 2 can be minimized.

The ALD equipment using the vapor deposition reactor shown in FIGS. 10Aand 10B as each of the first and second vapor deposition reactors 1 and2 has been shown in FIGS. 17A to 17D. However, the ALD equipment isprovided only for illustrative purposes. That is, the ALD equipment maybe configured using a vapor deposition reactor according to otherembodiments. As an example, the ALD equipment may be configured using avapor deposition reactor including two first portions.

FIG. 17E is a sectional view of an ALD equipment configured using avapor deposition reactor including two first portions. In the ALDequipment, each of the first and second vapor deposition reactors 1 and2 may include two first portions 10 and 10′, two second portions 20 and20′ and a third portion 30. In the ALD equipment configured as describedabove, a source precursor may be injected into a primary first portion10 of the first vapor deposition reactor 1, and an inert gas may beinjected into a secondary first portion 10′ of the first vapordeposition reactor 1. A reactant precursor may be injected into aprimary first portion 10 of the second vapor deposition reactor 2, andan inert gas may be injected into a secondary first portion 10′ of thesecond vapor deposition reactor 2.

While a substrate 40 passes by the first vapor deposition reactor 1, thefollowing processes are performed. First, while the substrate 40 passesby the primary first portion 10, the source precursor may be adsorbed onthe substrate. While the substrate 40 passes by the primary secondportion 20 and the third portion 30, a physisorbed layer of the sourceprecursor may be desorbed and exhausted. Subsequently, while thesubstrate 40 passes by the secondary second portion 20′, the inert gasinjected into the secondary first portion 10′ passes by the secondarysecond portion 20′. Therefore, pressure is lowered, and accordingly,additional desorption occurs. Through the aforementioned processes, onlya pure chemisorbed layer can remain on the substrate 40 that passes bythe first vapor deposition reactor 1.

Processes performed while the substrate 40 passes by the second vapordeposition reactor 2 are performed similarly to those performed whilethe substrate passes by the first vapor deposition reactor 1. However,the second vapor deposition reactor 2 is different from the first vapordeposition reactor 1 in that the reactant precursor is injected into theprimary first portion 10 of the second vapor deposition reactor 2. Thereactant precursor is reacted with a chemisorbed layer of the sourceprecursor adsorbed on the substrate 40, so that an atomic-layer thinfilm of a mono molecular-layer can be formed on the substrate thatpasses by all of the first and second vapor deposition reactors 1 and 2.

As described above, the shape of the vapor deposition reactors includedin the ALD equipments described with reference to FIGS. 17A to 17E isprovided only for illustrative purposes. That is, it will be readilyunderstood by those skilled in the art the ALD equipments may beconfigured using vapor deposition reactors according to otherembodiments described in this disclosure or various modifications thatare not described herein.

FIG. 18A is a plan view of an ALD equipment including vapor depositionreactors according to an embodiment. Referring to FIG. 18A, in the ALDequipment, a substrate 40 may be supported by a susceptor 400 anddisposed on a rotating table 410 to be rotatably moved. First and secondvapor deposition reactors 1 and 2 are disposed on the rotating table410. The first and second vapor deposition reactors 1 and 2 may bedisposed so that as the rotating table 410 is rotated, the substrate 40sequentially passes by lower portions of the first and second vapordeposition reactors 1 and 2. The number and shape of the first andsecond vapor deposition reactors 1 and 2 are provided only forillustrative purposes. The shape and/or number of the vapor depositionreactors 1 and 2 may be appropriately controlled based on thecharacteristics of a thin film to be formed.

FIG. 18B is a plan view of an ALD equipment including vapor depositionreactors according to another embodiment. Referring to FIG. 18B, a pairof first and second vapor deposition reactors 1 and 2 is configured, andone or more pairs of the first and second vapor deposition reactors 1and 2 may be arranged. Whenever a substrate 40 passes by a lower portionof each of the pairs of the first and second vapor deposition reactors 1and 2, a one-layer of thin film can be formed.

FIG. 18C is a plan view of an ALD equipment including vapor depositionreactors according to still another embodiment. Referring to FIG. 18C,the ALD equipment may be configured using vapor deposition reactors eachincluding two first portions 10 and 10′, two second portions 20 and 20′and a third portion 30. A source precursor and a reactant precursor areinjected the two first portions 10 and 10′, respectively, so that aone-layer atomic-layer thin film can be formed on a substrate 40whenever the substrate 40 passes by each of the vapor depositionreactors 1. Alternatively, a source precursor and an inert gas may beinjected into the two first portions 10 and 10′ of one vapor depositionreactor 1, respectively, and a reactant precursor and an inert gas maybe injected into the two first portions 10 and 10′ of a subsequent vapordeposition reactor 1.

In the embodiments described with reference to FIGS. 18A to 18C, therotating table 410 is rotated, and therefore, the angular velocity ofthe substrate 40 moved at the inside of the rotating table 410 isdifferent from that of the substrate 40 moved at the outside of therotating table 410. As a result, the thickness and/or characteristic ofa thin film formed on the substrate 40 that passes by the vapordeposition reactors 1 and 2 may not be uniform. To solve such a problem,the susceptor 400 is rotated separately from the rotation of therotating table 410, so that the substrate 40 can pass through the lowerportions of the vapor deposition reactors 1 and 2 while being rotated.For example, the substrate 40 may be rotated once while passing throughone of the vapor deposition reactors 1 and 2. However, the rotationvelocity of the substrate is not limited thereto, but may be properlycontrolled based on the characteristics of the thin film, and the like.

Meanwhile, the problem that the movement velocities of the substrate 40,respectively rotated at the inside and outside of the rotating table410, are different from each other may be solved by modifying the shapeof the vapor deposition reactor. FIG. 18D is a plan view of an ALDequipment including vapor deposition reactors according to still anotherembodiment. Referring to FIG. 18D, since the movement velocities of thesubstrate 40, respectively rotated at the inside and outside of therotating table 410, are different from each other, the vapor depositionreactor 1 may be configured to have a fan shape of which width isrelatively narrow at the inside of the rotating table 410 and isrelatively wide at the outside of the rotating table 410. Through theconfiguration describe above, it is unnecessary to rotate the susceptor400.

Example of Forming TiN Thin Film Using Vapor Deposition Reactor

FIG. 19 is a schematic view of an experimental apparatus for forming aTiN atomic-layer thin film using a vapor deposition reactor, accordingto an embodiment. FIG. 20 is a schematic perspective view of a portionof the vapor deposition reactor in the experimental apparatus of FIG.19, according to one embodiment. FIG. 21A is a schematic sectional viewof the experimental apparatus of FIG. 19. FIG. 21B is a schematicsectional view of a coaxial capacitive plasma generator, according toone embodiment.

Referring to FIGS. 19 to 21B, the experimental apparatus may include arotating susceptor 410 in which recesses are formed in a depth of 0.5 mmso that two 2-inch substrates and two 3-inch substrates can bepositioned in the recesses, respectively. The substrates supported bythe rotating susceptor 410 may be indirectly heated a metal heater 66installed at a lower portion of the rotating susceptor 410. A chamber 5may include a hole 65 for vacuum pumping, which may be connected to anexhaust pipe with a diameter of 40 mm. An exhaust portion 31 of a vapordeposition reactor 1 may be connected to an exhaust pipe with a diameterof 20 mm for the purpose of pumping. At this time, a throttle valve (notshown) may be installed in the exhaust pipe of the chamber 5 or thevapor deposition reactor 1 so as to control its exhaust velocity. Thevacuum degree of the chamber 5 may be measured by a vacuum gauge 62, andthe rotation velocity of the rotating susceptor 410 may be deceleratedby 10:1 to about 18 rpm as compared with that of a motor 61.

The experimental apparatus may further include a quartz tube 63 and acoil 64 so as to apply ICP (inductive coupled plasma) typeremote-plasma. A radio frequency (RF) voltage of about 5 to 100 watt maybe applied to the coil 64 so as to generate NH₃ plasma. However, inanother embodiment, a TiN atomic-layer thin film may be formed by asimple thermal reaction without generating plasma. At this time, in theexperimental apparatus, an additional vapor deposition reactor may beinstalled in the portion in which the quartz tube 63 and the coil 64 areto be installed, and NH₃ may be injected as a reactant precursor intothe additional vapor deposition reactor. TiCl4 may be supplied as asource precursor to the vapor deposition reactor 1 using an Ar bubblingmethod. In the vapor deposition reactor, the deposition efficiency,i.e., the ratio of the source precursor used in the formation of a thinfilm with respect to the source precursor supplied, is high, and hence,TiCl₄ is supplied from a canister which is cooled down to about −4° C.

The height of a first portion of the vapor deposition reactor 1 is about20 mm, the width of the first portion is about 10 mm, and the length ofthe first portion is about 100 mm. The width of a third portion of thevapor deposition reactor 1 is about 16 mm. From the results obtained inTables 1, 2 and 3, the vapor deposition reactor 1 may be configured sothat the height of a second portion is about 2 mm and the width of thesecond portion is about 4 mm. When the substrate 40 passes by a lowerportion of the vapor deposition reactor 1, the time at which thesubstrate 40 is exposed to the first portion is about 105 msec at aninside of the substrate 40 close to the center of the rotating table 410when the rotation velocity of the rotating table 410 is about 10 rpm,and the time is about 60 msec when the rotation velocity of the rotatingtable 410 is about 18 rpm. Meanwhile, the angular velocity of an outsideof the substrate 40 distant from the center of the rotating table 410 isgreater than that of the inside of the substrate 40. As a result, whenthe rotation velocity of the rotating table 410 is about 10 rpm andabout 18 rpm, the times at which the outside of the substrate 40 isexposed to the first portion are about 80 msec and about 44 msec,respectively.

The time at which the inside of the substrate 40 passes by the secondand third portions is about 210 msec when the rotation velocity of therotating table 410 is about 10 rmp, and the time is about 120 msec whenthe rotation velocity of the rotating table 410 is about 18 rpm. Also,the time at which the inside of the substrate 40 completely passes bythe vapor deposition reactor 1 is about 315 msec when the rotationvelocity of the rotating table 410 is about 10 rmp, and the time isabout 180 msec when the rotation velocity of the rotating table 410 isabout 18 rpm.

The experimental apparatus may further include a coaxial remote plasmagenerator 2 as illustrated in FIG. 21B. The plasma generator 2 includesa body 2100 and valves Va, Vb and Vc for transporting and controllingrates of materials for generating plasma 1200. A voltage of 500V to1500V is applied across the electrodes 12A and 12B in a first portion 10to generate plasma 1200. The generated plasma 2100 is provided throughan injector 1100 in the form of slits. In one embodiment, the slits havewidths not smaller than 2 mm. In one embodiment, the distance betweenthe substrate and the upper end of the injector 1100 is preferably 15 to20 mm. The diameter of the cylindrical space holding the plasma 1200 is10 mm to 20 mm. In one embodiment the distance between the substrate andthe injector is 12 mm.

In one embodiment, reactant gas such as O₂, H₂ or NH₃ is provided viapipes 2202, 2204, 2206 and valves Va, Vb and Vc to the cylindricalspace. By applying voltage across the electrodes 12A and 12B in thepresence of the reactance gas, the coaxial capacitive plasma isgenerated. The top surface of the substrate is exposed to O* radical, N*radical or H* radicals obtained from the coaxial capacitive plasma toform an ALD layer. Remaining O* radical, N* radical or H* radicals aredischarged via a second portion 20, a third portion 30 and an exhaustportion 310.

Meanwhile, the experimental apparatus may include a halogen lamp (notshown) installed between the vapor deposition reactors 1 or at the lastposition of the substrate 40 so that additional thermal treatment can beperformed during or after a thin film is deposited. In addition, beforean atomic-layer thin film is deposited, cleaning or removing of anatural oxide film may be performed with respect to the substrate 40. Inthis case, a gas for removing an oxide film, such as ClF₃ or NF₃, may beinjected into the vapor deposition reactor 1, or hydrogen remote-plasmamay be generated in the vapor deposition reactor 1. Thus, the atomiclayer thin film may be deposited through in-situ by performing a surfacetreatment or pre-processing process before the atomic layer thin film isdeposited. Alternatively, after the natural oxide thin film is removed,nitriding may be performed with respect to the substrate using nitrogenradical by nitrogen remote-plasma. Then, a high-k thin film may bedeposited through in-situ.

FIG. 22A is a scanning electron microscope (SEM) photograph of a TiNthin film formed using a vapor deposition reactor according to anembodiment. FIGS. 22B to 22D are SEM photographs obtained by enlargingupper, middle and lower portions 2200, 2210, 2220 of FIG. 22A,respectively.

FIG. 23A is a transmission electron microscope (TEM) photograph of theTiN thin film formed using the vapor deposition reactor according to anembodiment. FIGS. 23B to 23D are TEM photographs obtained by enlargingupper, middle and lower portions 2300, 2310, 2320 of FIG. 23A,respectively.

The TiN thin films shown in FIGS. 22 and 23 are deposited on a trenchpattern with a diameter of about 135 nm so as to check conformality thatis a characteristic of the atomic-layer thin film. At this time, thedepth of a trench is about 8 μm, and the pattern density is 1:2. Ar gasof about 3 sccm is used to bubble TiCl₄ as a source precursor, and NH₃gas of about 20 sccm is used as a reactant precursor. The depositiontemperature of the thin film is about 380° C., and the rotating table isrotated 200 times at a rotation velocity of about 10 rpm, therebydepositing a TiN atomic-layer thin film with a thickness of about 13.5nm. Whenever the substrate passes by the vapor deposition reactor, a TiNthin film with a thickness of about 0.67 Å is formed. The TiN thin filmhas the (111) crystal direction with a columnar shape, and has excellentconformality in which a bottom coverage is 95%.

FIG. 24A is an SEM photograph of a TiN thin film formed using a vapordeposition reactor according to another embodiment. FIGS. 24B to 24D areSEM photographs obtained by enlarging upper, middle and lower portions2400, 2410, 2420 of FIG. 24A, respectively. FIG. 24 illustrates a TiNatomic-layer thin film formed using remote-plasma.

In the TiN thin film shown in FIG. 24, Ar gas of about 3 sccm is used tobubble TiCl₄ as a source precursor, and NH₃ gas of about 15 sccm is usedas a reactant precursor. Power of 10 W is applied for generating plasma.The deposition temperature of the thin film is about 380° C., and therotating table is rotated 200 times at a rotation velocity of about 10rpm, thereby depositing a TiN atomic-layer thin film with a thickness ofabout 15.5 nm. Whenever the substrate passes by the vapor depositionreactor, a TiN thin film with a thickness of about 0.77 Å is formed. TheTiN thin film has a step-coverage of 80%.

The TiN thin films shown in FIGS. 22 and 23 are compared with the TiNthin film shown in FIG. 24. When radicals are generated by plasma areused, the deposition velocity is increased, but the conformality isdecreased.

In the conventional methods of atomic layer deposition, a precursor isinjected into the chamber, and a thin film is obtained using only amolecule layer adsorbed on the surface of the substrate. Therefore, inthe formation of an atomic layer, the deposition efficiency, i.e., theratio of a source used in the deposition with respect to a total sourceinjected, has a close relationship with the size of the chamber.

However, if one of the vapor deposition reactors according to theaforementioned embodiments are used, the reacting material is filledonly in the first portion of the vapor deposition reactor, and hence,the deposition efficiency is very higher than that in the conventionalvapor deposition reactors. Also, since the adsorption and desorption ofthe molecule layer are performed while passing the substrate through thelower portion of the vapor deposition reactor, the precursor iscontinuously supplied with no valve for ALD or driving unit, and thus,the configuration of the vapor deposition reactor can be simplified.

Also, since the injection, desorption and exhaustion of the reactingmaterial are performed in the interior of the vapor deposition reactor,the deposition can be performed regardless of the atmosphere in theinterior of the chamber. Also, since the source precursor and reactantprecursor are injected into and exhausted from separate vapor depositionreactors, respectively, a reactant byproduct such as powder or gum isnot produced in an exhaust line. Accordingly, the reliability,durability and economy of the apparatus can be improved in addition tothe thin film.

While the present invention has been described in connection withcertain exemplary embodiments, it is to be understood that the inventionis not limited to the disclosed embodiments, but, on the contrary, isintended to cover various modifications and equivalent arrangementsincluded within the spirit and scope of the appended claims, andequivalents thereof.

What is claimed is:
 1. A vapor deposition reactor comprising: a firstportion of a body formed with a first recess for receiving a reactionmaterial, the first portion of the body having a first bottom surfacedefining the first recess and facing a substrate passing below the vapordeposition reactor, the first recess subject to a first pressure of thereaction material and formed within the first portion at a lower side ofthe body; a second portion of the body adjacent to the first portion ofthe body, the second portion formed with a second recess communicativelyconnected to the first recess, the second portion of the body having asecond bottom surface defining the second recess and facing thesubstrate, the second recess subject to a second pressure of thereaction material lower than the first pressure by having a height notgreater than ⅔ of a width of the first recess, the height representing avertical distance between a lowest surface of the body and the secondbottom surface; and a third portion of the body adjacent to the secondportion of the body, the third portion communicatively connected to thesecond portion of the body to discharge the reaction material from thevapor deposition reactor, the second portion bounded at sides by thefirst and third portions.
 2. The vapor deposition reactor according toclaim 1, wherein a width of the second portion is greater than a half ofa height of the second recess.
 3. The vapor deposition reactor accordingto claim 1, wherein the height of the second recess is not greater than⅓ of a height of the first recess.
 4. The vapor deposition reactoraccording to claim 1, wherein the width of the third portion is greaterthan the height of the second recess.
 5. The vapor deposition reactoraccording to claim 1, wherein the third portion is subject to a thirdpressure lower than the first pressure.
 6. The vapor deposition reactoraccording to claim 1, further comprising a first adjustable wingconfigured to at least partially change the height of the second recess.7. The vapor deposition reactor according to claim 1, further comprisinga second adjustable wing configured to change the ratio of the height ofthe second recess with respect to the width of the first recess.
 8. Thevapor deposition reactor according to claim 1, wherein the reactingmaterial comprises a source precursor and a reactant precursor forperforming atomic layer deposition (ALD).
 9. The vapor depositionreactor according to claim 8, wherein the source precursor comprises aninorganic compound and an organic compound.
 10. The vapor depositionreactor according to claim 8, wherein the reactant precursor comprisesone or more selected from the group consisting of H₂O, H₂O₂, O₂, N₂O,NO, O₃, O* radical, NH₃, NH₂—NH₂, N* radical, CO, CO₂, CH₄, C₂H₆, H₂ andH* radical.
 11. The vapor deposition reactor according to claim 1,wherein the first injection portion further injects an inert gas intothe first recess.
 12. The vapor deposition reactor according to claim11, wherein the inert gas comprises one or more selected from the groupconsisting of N₂, Ar and He.
 13. The vapor deposition reactor accordingto claim 1, further comprising at least one second injection portionconnected to the first recess and configured to inject an inert gas tothe first recess.
 14. The vapor deposition reactor according to claim13, wherein the inert gas comprises one or more selected from the groupconsisting of N₂, Ar and He.
 15. The vapor deposition reactor accordingto claim 1, wherein the first portion comprises a plurality of firstrecesses, and the second portion comprises a plurality of secondrecesses.
 16. The vapor deposition reactor according to claim 1, whereinthe reaction material is a precursor, inert gas, radical or mixturethereof.
 17. The vapor deposition reactor according to claim 1, whereinthe height of the second recess is not greater than ⅓ of the width ofthe first recess.
 18. The vapor deposition reactor according to claim 1,wherein a distance between the substrate to the vapor deposition reactoris 0.5 mm to 3 mm.